한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

비정질 실리콘 TFT의 광누설 전류에 Backlight 광원의 광학적 특성이 미치는 영향에 대한 연구

A Study on the Effects of the Optical Characteristics of backlight Sources on the Photo Leakage Currents of a-Si:H Thin Film Transistor

  • 임승혁 (경원대학교 전자정보통신공학부 전자공학과) ;
  • 권상직 (경원대학교 전자정보통신공학부 전자공학과) ;
  • 조의식 (경원대학교 전자정보통신공학부 전자공학과)
  • Im, S.H. (Department of Electronics Engineering, Kyungwon University) ;
  • Kwon, S.J. (Department of Electronics Engineering, Kyungwon University) ;
  • Cho, E.S. (Department of Electronics Engineering, Kyungwon University)
  • 발행 : 2008.04.25
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초록

The photo leakage currents of a conventional hydrogenated amorphous silicon(a-Si:H) thin film transistor(TFT) were investigated and analyzed in the case of illumination from various lightsources such as halogen lamp, cold cathode fluorescent lamp(CCFL) backlight, and white light emitting diode(LED) backlight The photo leakage characteristics showed the apparent differences in the leakage level and in the $I_{on}/I_{off}$ ratio in spite of the similar luminances of light sources. This leakage level is expected to be related to the wavelength of the lowest intensity peak from spectral analysis of light sources.

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