Threshold current to move domain walls in perpendicular $anisotropy[CoFe/Pt]_N$

  • Bae, Ji-Young (Semiconductor Devices Laboratory, Samsung Advanced Institute of Technology (SAIT)) ;
  • Cho, Young-Jin (Semiconductor Devices Laboratory, Samsung Advanced Institute of Technology (SAIT)) ;
  • Lee, Sung-Chul (Semiconductor Devices Laboratory, Samsung Advanced Institute of Technology (SAIT)) ;
  • Pi, Ung-Hwan (Semiconductor Devices Laboratory, Samsung Advanced Institute of Technology (SAIT)) ;
  • Seo, Sun-Ae (Semiconductor Devices Laboratory, Samsung Advanced Institute of Technology (SAIT))
  • Published : 2008.06.28