New doping technique of Mn Activator on ZnS Host for Photoluminescence Enhancement

  • Wentao, Zhang (Department of Applied Materials Engineering, Chungnam National University) ;
  • Lee, Hong-Ro (Department of Applied Materials Engineering, Chungnam National University)
  • Published : 2008.11.19

Abstract

Triple layers structure of $SiO_2$/ZnS:Mn/ZnS was synthesized by using ion substitution and chemical precipitation method. Each layer thickness was controlled by adjusting the concentration of manganese (II) acetate ($Mn(CH_3COO)_2$) and tetraethyl orthosilicate (TEOS). The structure and morphology of prepared phosphors were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and electron probe microscopic analyzer (EPMA). Photoluminescence (PL) properties of ZnS with different layer thickness and amount of Mn activator were analyzed by PL spectrometer. PL emission intensity and PL stability were analyzed for evaluating effects of Mn activator.

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