The effects of Se evaporation temperature on CIS absorber layer fabricated by non-vacuum process

Se 증발온도가 비진공 공정으로 제조한 CIS 광흡수층에 미치는 영향

  • 박명국 (한국에너지기술연구원 태양전지 연구단) ;
  • 안세진 (한국에너지기술연구원 CIS 태양전지 실험실) ;
  • 윤재호 (한국에너지기술연구원 CIS 태양전지 실험실) ;
  • 윤경훈 (한국에너지기술연구원 CIS 태양전지 실험실)
  • Published : 2008.05.22

Abstract

A non-vacuum process for fabrication of $CuInSe_2$ (CIS) absorber layer from the corresponding Cu, In solution precursors was described. Cu, In solution precursors was prepared by a room temperature colloidal route by reacting the starting materials $Cu(NO_3)_2$, $InCl_3$ and methanol. The Cu, In solution precursors were mixed with ethylcellulose as organic binder material for the rheology of the mixture to be adjusted for the doctor blade method. After depositing the mixture of Cu, In solution with binder on Mo/glass substrate, the samples were preheated on the hot plate in air to evaporate remaining solvents and to burn the organic binder material. Subsequently, the resultant CI/Mo/glass sample was selenized in Se evaporation in order to get a solar cell applicable dense CIS absorber layer. The CIS absorber layer selenized at $530^{\circ}C$ substrate temperature for 30 min with various Se gas evaporation temperature was characterized by XRD, SEM, EDS.

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