Organic Thin Film Transistors with Cross-linked PVP Gate Dielectrics by Using Photo-initiator and PMF

  • Yun, Ho-Jin (Electronics and Telecommunications Research Institute (ETRI)) ;
  • Baek, Kyu-Ha (Electronics and Telecommunications Research Institute (ETRI)) ;
  • Park, Kun-Sik (Electronics and Telecommunications Research Institute (ETRI)) ;
  • Shin, Hong-Sik (Electronics and Telecommunications Research Institute (ETRI)) ;
  • Ham, Yong-Hyun (Electronics and Telecommunications Research Institute (ETRI)) ;
  • Lee, Ga-Won (Chungnam National University) ;
  • Lee, Ki-Jun (Chungnam National University) ;
  • Wang, Jin-Suk (Chungnam National University) ;
  • Do, Lee-Mi (Electronics and Telecommunications Research Institute (ETRI))
  • Published : 2009.10.12

Abstract

We have fabricated pentacene based organic thin film transistors (OTFTs) with formulated poly[4-vinylphenol] (PVP) gate dielectrics. The gate dielectrics is composed of PVP, poly[melamine-coformaldehyde] (PMF) and photo-initiator [1-phenyl-2-hydroxy-2-methylpropane-1-one, Darocur1173]. By adding small amount (1 %) of photo-initiator, the cross-linking temperature is lowered to $115^{\circ}C$, which is lower than general thermal curing reaction temperature of cross-linked PVP (> $180^{\circ}C$). The hysteresis and the leakage current of the OTFTs are also decreased by adding the PMF and the photoinitiator in PVP gate dielectrics.

Keywords