Analysis and Improvement of Reliability in IGZO TFT for Next Generation Display

We investigated the degradation of $In_2O_3-Ga_2O_3$-ZnO (IGZO) thin-film transistors (TFTs), which is promising device for driving circuits of nextgeneration displays. We performed the electronic stress test by applying gate and drain voltage. We discussed the degradation mechanism by thermal analysis and device simulation.