Plasma Treatment Effects on Tungsten Oxide Hole Injection Layer for Application to Inverted Top-Emitting Organic Light-Emitting Diodes

  • Kim, Joo-Hyung (Korea Dept. of Display and Semiconductor Physics, Korea University) ;
  • Lee, You-Jong (Korea Dept. of Display and Semiconductor Physics, Korea University) ;
  • Jang, Yun-Sung (Korea Dept. of Display and Semiconductor Physics, Korea University) ;
  • Kim, Doo-Hyun (Korea Dept. of Display and Semiconductor Physics, Korea University) ;
  • Hong, Mun-Pyo (Korea Dept. of Display and Semiconductor Physics, Korea University)
  • 발행 : 2009.10.12

초록

In the fabrication of inverted top-emitting organic light emitting diodes (ITOLEDs), the sputtering process is needed for deposition of transparent conducting oxide (TCO) as top anode. Energetic particle bombardment, however, changes the physical properties of underlying layers. In this study, we examined plasma process effects on tungsten oxide ($WO_3$) hole injection layer (HIL). From our results, we suggest the theoretical mechanism to explain the correlation between the physical property changes caused by plasma process on $WO_3$ HIL and degradation of device performances.

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