한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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5.1: Control of Electrical Characteristics of Solution Processed TFTs Depending on InGaZnO Composition Variation

  • Kim, Gun-Hee (School of Electrical and Electronic Engineering, Yonsei University) ;
  • Jeong, Woong-Hee (School of Electrical and Electronic Engineering, Yonsei University) ;
  • Ahn, Byung-Du (School of Electrical and Electronic Engineering, Yonsei University) ;
  • Shin, Hyun-Soo (School of Electrical and Electronic Engineering, Yonsei University) ;
  • Kim, Hyun-Jae (School of Electrical and Electronic Engineering, Yonsei University)
  • Published : 2009.10.12
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Abstract

The effects of In and Ga contents on characteristics of InGaZnO (IGZO) films grown by a sol-gel method and their thin film transistors (TFTs) have been investigated. Excess In incorporation into IGZO enhances the field effect mobilities of the TFTs due to the increase in conducting path ways, and decreases the grain size and the surface roughness of the films because more $InO_2^-$ ions induce cubic stacking faults with IGZO. Ga incorporation into results in decrease in carrier concentration of films and off-current of TFTs since Ga ion forms stronger chemical bonds with oxygen than Zn and In ions, acting as a carrier killer.

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