한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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Light Effects of amorphous indium gallium zinc oxide thin-film transistor

  • Lee, Keun-Woo (School of Electrical and Electronic Engineering, Yonsei University) ;
  • Shin, Hyun-Soo (School of Electrical and Electronic Engineering, Yonsei University) ;
  • Heo, Kon-Yi (School of Electrical and Electronic Engineering, Yonsei University) ;
  • Kim, Kyung-Min (School of Electrical and Electronic Engineering, Yonsei University) ;
  • Kim, Hyun-Jae (School of Electrical and Electronic Engineering, Yonsei University)
  • Published : 2009.10.12
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Abstract

We've studied the optical and electrical properties of amorphous indium gallium zinc oxide thin-film transistor (a-IGZO TFT). When the a-IGZO TFT was illuminated at a wavelength of 660 nm, the offstate drain current was slightly increased, while below 550 nm it was increased significantly. The a-IGZO TFT was extremely sensitive, with deep-level defects at approximately 2.25 eV near the midgap.

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