Solution-Processed Zinc-Tin Oxide Thin-Film Transistors for Integrated Circuits

  • Kim, Kwang-Ho (Semiconductor and Information Display Research Division, Korea Electronics Technology Institutes) ;
  • Park, Sung-Kyu (Semiconductor and Information Display Research Division, Korea Electronics Technology Institutes) ;
  • Kim, Yong-Hoon (Semiconductor and Information Display Research Division, Korea Electronics Technology Institutes) ;
  • Kim, Hyun-Soo (Semiconductor and Information Display Research Division, Korea Electronics Technology Institutes) ;
  • Oh, Min-Suk (Semiconductor and Information Display Research Division, Korea Electronics Technology Institutes) ;
  • Han, Jeong-In (Semiconductor and Information Display Research Division, Korea Electronics Technology Institutes)
  • Published : 2009.10.12

Abstract

We have fabricated solution-processed zinc-tin oxide thin film transistors (TFTs) and simple circuits on glass substrates. We report a solutionprocessed zinc-tin oxide TFTs on silicon wafer with mobility greater than 9 $cm^2/V{\cdot}s$ (W/L = 100/5 ${\mu}m$) and threshold voltage variation of less than 1 V after bias-stressing. Also, we fabricated solution-processed zinc-tin oxide circuits including inverters and 7-stage ring oscillators fabricated on glass substrates using the developed zinc-tin oxide TFTs.

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