Investigation of contact resistance between metal electrodes and amorphous gallium indium zinc oxide (a-GIZO) thin-film transistors

  • Kim, Woong-Sun (Department of Materials Science and Engineering, Hanyang University) ;
  • Moon, Yeon-Keon (Department of Materials Science and Engineering, Hanyang University) ;
  • Lee, Sih (Department of Materials Science and Engineering, Hanyang University) ;
  • Kang, Byung-Woo (Department of Materials Science and Engineering, Hanyang University) ;
  • Kwon, Tae-Seok (Department of Materials Science and Engineering, Hanyang University) ;
  • Kim, Kyung-Taek (Department of Materials Science and Engineering, Hanyang University) ;
  • Park, Jong-Wan (Department of Materials Science and Engineering, Hanyang University)
  • Published : 2009.10.12

Abstract

In this paper, we investigated the effects of different source/drain (S/D) electrode materials in thin film transistors (TFTs) based on indium-gallium-zinc oxide (IGZO) semiconductor. A transfer length and effective resistances between S/D electrodes and amorphous IGZO thin-film transistors were examined. Intrinsic TFT parameters were extracted by the transmission line method (TLM) using a series of TFTs with different channel lengths measured at a low drain voltage. The TFTs fabricated with Cu S/D electrodes showed the lowest contact resistance and transfer length indicating good ohmic characteristics, and good transfer characteristics with a field-effect mobility (${\mu}_{FE}$) of 10.0 $cm^2$/Vs.

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