Illumination Assisted Negative Bias Temperature Instability Degradation in Low-Temperature Polycrystalline Silicon Thin-Film Transistors

  • Lin, Chia-Sheng (Depart. of Electrical Engineering, National Sun Yat-Sen University) ;
  • Chen, Ying-Chung (Depart. of Electrical Engineering, National Sun Yat-Sen University) ;
  • Chang, Ting-Chang (Depart. of Physics, National Sun Yat-Sen University) ;
  • Hsu, Wei-Che (Depart. of Physics, National Sun Yat-Sen University) ;
  • Chen, Shih-Ching (Depart. of Physics, National Sun Yat-Sen University) ;
  • Li, Hung-Wei (Depar. t of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University)
  • 발행 : 2009.10.12

초록

The negative bias temperature instability on LTPS TFTs in a darkened and an illuminated environment was investigated. Experimental results reveal that the generation of interface state density showed no change between the different NBTI stresses. The degradation of the grain boundary trap under illumination was more significant than for the darkened environment.

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