한국정보디스플레이학회:학술대회논문집
- 2009.10a
- /
- Pages.557-559
- /
- 2009
The Study of Nanocrystalline Silicon Bottom-gate Thin Film Transistor Fabricated at Low Temperature for Flexible Display
- Lee, Youn-Jin (Dept. of Nano Science and Technology, University of Seoul) ;
- Lee, Kyoung-Min (Dept. of Nano Engineering, University of Seoul) ;
- Hwang, Jae-Dam (Dept. of Nano Science and Technology, University of Seoul) ;
- No, Kil-Sun (Dept. of Nano Science and Technology, University of Seoul) ;
- Yoon, Kap-Soo (Samsung Electronics Co.,Ltd.) ;
- Yang, Sung-Hoon (Samsung Electronics Co.,Ltd.) ;
- Hong, Wan-Shick (Dept. of Nano Science and Technology, University of Seoul)
- Published : 2009.10.12
Abstract
We attempted modulation of hydrogen dilution ratio to achieve both the minimal incubation layer and high deposition rate. The incubation layer thickness was estimated by transmission electron microscopy (TEM) and crystallization fraction was measured by Raman spectroscopy.