Fabrication of soluble organic thin film transistor with ammonia ($NH_3$) plasma treatment

  • Kim, Dong-Woo (Dept. of Display and Semiconductor Physics, Korea University) ;
  • Kim, Doo-Hyun (Dept. of Display and Semiconductor Physics, Korea University) ;
  • Kim, Keon-Soo (Dept. of Display and Semiconductor Physics, Korea University) ;
  • Kim, Hyoung-Jin (Dept. of Display and Semiconductor Physics, Korea University) ;
  • Choi, Hong (Dept. of Display and Semiconductor Physics, Korea University) ;
  • Lee, Dong-Hyeok (Dept. of Display and Semiconductor Physics, Korea University) ;
  • Hong, Mun-Pyo (Dept. of Display and Semiconductor Physics, Korea University)
  • Published : 2009.10.12

Abstract

We have examined the silicon nitride ($SiN_x$) as gate insulator with the ammonia ($NH_3$) plamsa treatment for the soluble derivatives of polythiophene as p-type channel materials of organic thin film transistors (OTFTs). Fabrications of the jetting-processed OTFTs with $SiN_x$ as gate insulator by $NH_3$ plasma treatment can be similar to performance of OTFTs with silicon dioxide ($SiO_2$) insulator.

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