Metal Oxide/Metal Bi-layer for Low-Cost Source/Drain Contact of Pentacene OTFT

  • Moon, Han-Ul (School of Electrical Engineering & Computer Science, KAIST) ;
  • Yoo, Seung-Hyup (School of Electrical Engineering & Computer Science, KAIST)
  • Published : 2009.10.12

Abstract

Metal oxide/metal bilayer structures are explored as contacts with a low injection barrier in organic thin-film transistors (OTFTs) in an effort to realize their true potential for low-cost electronics. OTFTs with a bilayer electrode of $WO_3$ (10nm) and Al shows a saturation mobility as large as 0.97 $cm^2$/Vsec which are comparable to those of Au-based control samples (~0.90 $cm^2$/Vsec). Scaling of contact resistance with respect to the thickness of $WO_3$ layer is also discussed.

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