한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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Development of Highly Stable Organic Nonvolatile Memory

  • Baeg, Kang-Jun (Convergence Components & Materials Research Laboratory, Electronics Telecommunications Research Institute (ETRI)) ;
  • Kim, Dong-Yu (Heeger Center for Advanced Materials, Dept. of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST)) ;
  • You, In-Kyu (Convergence Components & Materials Research Laboratory, Electronics Telecommunications Research Institute (ETRI)) ;
  • Noh, Yong-Young (Convergence Components & Materials Research Laboratory, Electronics Telecommunications Research Institute (ETRI))
  • Published : 2009.10.12
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Abstract

Organic field-effect transistor (OFET) memory is an emerging device for its potential to realize light-weight, low cost flexible charge storage media. Here we report on a solution-processed poly[9,9-dioctylfluorenyl-2,7-diyl]-co-(bithiophene)] (F8T2) nano floating-gate memory (NFGM) with top-gate/bottom-contact device configuration. A reversible shift in the threshold voltage ($V_{Th}$) and the reliable memory characteristics were achieved by incorporation of thin Au nanoparticles (NPs) as charge storage sites for negative electrons at the interface between polystyrene and cross-linked poly(4-vinylphenol).

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