한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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Sol-Gel Processed InGaZnO Oxide Semiconductor Thin-Film Transistors for Printed Active-Matrix Displays

  • Kim, Yong-Hoon (Flexible Display Research Center, Korea Electronics Technology Institute) ;
  • Park, Sung-Kyu (Flexible Display Research Center, Korea Electronics Technology Institute) ;
  • Oh, Min-Suk (Flexible Display Research Center, Korea Electronics Technology Institute) ;
  • Kim, Kwang-Ho (Flexible Display Research Center, Korea Electronics Technology Institute) ;
  • Han, Jeong-In (Flexible Display Research Center, Korea Electronics Technology Institute)
  • Published : 2009.10.12
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Abstract

Solution-processed indium-gallium-zinc-oxide thin-film transistors were fabricated by sol-gel method. By a combinatorial study of InGaZnO multi-component system, optimum molar ratio of In, Ga, and Zn has been selected. By adjusting the In:Ga:Zn molar ratio, TFTs with field-effect mobility of 0.5 ~ 1.5 $cm^2$/V-s, threshold voltage of -5 ~ 5 V, and subthreshold slope of 1.5 ~ 2.5 V/decade were achieved.

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