한국정보디스플레이학회:학술대회논문집
- 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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- Pages.1002-1004
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- 2009
Sol-Gel Processed InGaZnO Oxide Semiconductor Thin-Film Transistors for Printed Active-Matrix Displays
- Kim, Yong-Hoon (Flexible Display Research Center, Korea Electronics Technology Institute) ;
- Park, Sung-Kyu (Flexible Display Research Center, Korea Electronics Technology Institute) ;
- Oh, Min-Suk (Flexible Display Research Center, Korea Electronics Technology Institute) ;
- Kim, Kwang-Ho (Flexible Display Research Center, Korea Electronics Technology Institute) ;
- Han, Jeong-In (Flexible Display Research Center, Korea Electronics Technology Institute)
- 발행 : 2009.10.12
초록
Solution-processed indium-gallium-zinc-oxide thin-film transistors were fabricated by sol-gel method. By a combinatorial study of InGaZnO multi-component system, optimum molar ratio of In, Ga, and Zn has been selected. By adjusting the In:Ga:Zn molar ratio, TFTs with field-effect mobility of 0.5 ~ 1.5