한국정보디스플레이학회:학술대회논문집
- 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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- Pages.1044-1046
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- 2009
Self sustained n-type memory transistor devices based on natural cellulose paper fibers
- Martins, R. (Materials Science Dept, CENIMAT/I3N, FCT-UNL and CEMOP/UNINOVA, Campus de Caparica) ;
- Barquinha, P. (Materials Science Dept, CENIMAT/I3N, FCT-UNL and CEMOP/UNINOVA, Campus de Caparica) ;
- Pereira, L. (Materials Science Dept, CENIMAT/I3N, FCT-UNL and CEMOP/UNINOVA, Campus de Caparica) ;
- Goncalves, G. (Materials Science Dept, CENIMAT/I3N, FCT-UNL and CEMOP/UNINOVA, Campus de Caparica) ;
- Ferreira, I. (Materials Science Dept, CENIMAT/I3N, FCT-UNL and CEMOP/UNINOVA, Campus de Caparica) ;
- Fortunato, E. (Materials Science Dept, CENIMAT/I3N, FCT-UNL and CEMOP/UNINOVA, Campus de Caparica)
- 발행 : 2009.10.12
초록
Here we report the architecture for a non-volatile n-type memory paper field-effect transistor. The device is built using the hybrid integration of natural cellulose fibers (pine and eucalyptus fibers embedded in an ionic resin), which act simultaneously as substrate and gate dielectric, with amorphous GIZO and IZO oxides as gate and channel layers, respectively. This is complemented by the use of continuous patterned metal layers as source/drain electrodes.