Routes to Improving Performance of Solution-Processed Organic Thin Film Transistors

  • Li, Flora M. (Department of Engineering, University of Cambridge) ;
  • Hsieh, Gen-Wen (Department of Engineering, University of Cambridge) ;
  • Nathan, Arokia (London Centre for Nanotechnology, University College London) ;
  • Beecher, Paul (Nokia Research Centre) ;
  • Wu, Yiliang (Xerox Research Centre of Canada) ;
  • Ong, Beng S. (School of Materials Science and Eng., Nanyang Technological University) ;
  • Milne, William I. (Department of Engineering, University of Cambridge)
  • Published : 2009.10.12

Abstract

This paper investigates approaches for improving effective mobility of organic thin film transistors (OTFTs). We consider gate dielectric optimization, whereby we demonstrated >2x increase in mobility by using a silicon-rich silicon nitride ($SiN_x$) gate dielectric for polythiophene-based (PQT) OTFTs. We also engineer the dielectric-semiconductor ($SiN_x$-PQT) interface to attain a 27x increase in mobility (up to 0.22 $cm^2$/V-s) using an optimized combination of oxygen plasma and OTS SAM treatments. Augmentative material systems by combining 1-D nanomaterials (e.g., carbon nanotubes, zinc oxide nanowires) in an organic matrix for nanocomposite OTFTs provided a further boost in device performance.

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