Fabrication of 1-${\mu}m$ channel length OTFTs by microcontact printing

  • Shin, Hong-Sik (Electronic and Telecommunications Research Institute (ETRI)) ;
  • Baek, Kyu-Ha (Electronic and Telecommunications Research Institute (ETRI)) ;
  • Yun, Ho-Jin (Electronic and Telecommunications Research Institute (ETRI)) ;
  • Ham, Yong-Hyun (Electronic and Telecommunications Research Institute (ETRI)) ;
  • Park, Kun-Sik (Electronic and Telecommunications Research Institute (ETRI)) ;
  • Lee, Ga-Won (Dept. of Electronics Engineering, Chungnam National University) ;
  • Lee, Hi-Deok (Dept. of Electronics Engineering, Chungnam National University) ;
  • Wang, Jin-Suk (Dept. of Electronics Engineering, Chungnam National University) ;
  • Lee, Ki-Jun (Dept. of Electronics Engineering, Chungnam National University) ;
  • Do, Lee-Mi (Electronic and Telecommunications Research Institute (ETRI))
  • 발행 : 2009.10.12

초록

We have fabricated inverted staggered pentacene Thin Film Transistor (TFT) with 1-${\mu}m$ channel length by micro contact printing (${\mu}$-CP) method. Patterning of micro-scale source/drain electrodes without etching was successfully achieved using silver nano particle ink, Polydimethylsiloxane (PDMS) stamp and FC-150 flip chip aligner-bonder. Sheet resistance of the printed Ag nano particle films were effectively reduced by two step annealing at $180^{\circ}C$.

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