Novel Method to Form Metal Electrodes by Self-Alignment and Self-Registration Processes

  • Shin, Dong-Youn (Nano-Mechanical Systems Research Division, Korea Institute of Machinery and Materials)
  • Published : 2009.10.12

Abstract

Self-alignment for the fabrication of printed thin film transistors has become of great interest because of the resolution and registration limits of printing technologies. In this work, self-patterning and selfregistration processes are introduced, which do not need surface energy patterning and the resulting minimum gate channel length could be down to $11.2{\mu}m$ with the sheet resistance of 2.6 ${\Omega}/{\square]$ for the source and drain electrodes.

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