a-Si Gate Driver with Alternating Gate Bias to Pull-Down TFTs

  • Kim, Byeong-Hoon (Dept. of Electronics Engineering, Konkuk University) ;
  • Pi, Jae-Eun (Dept. of Electronics Engineering, Konkuk University) ;
  • Oh, Min-Woo (Dept. of Electronics Engineering, Konkuk University) ;
  • Tao, Ren (Dept. of Electronics Engineering, Konkuk University) ;
  • Oh, Hwan-Sool (Dept. of Electronics Engineering, Konkuk University) ;
  • Park, Kee-Chan (Dept. of Electronics Engineering, Konkuk University)
  • 발행 : 2009.10.12

초록

A novel a-Si TFT integrated gate driver circuit which suppresses the threshold voltage shift due to prolonged positive gate bias to pull-down TFTs, is reported. Negative gate-to-drain bias is applied alternately to the pull-down TFTs to recover the threshold voltage shift. Consequently, the stability of the circuit has been improved considerably.

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