Self-Assembled $TiO_2$ and Polyelectrolyte Multilayer as OTFT Gate Insulator

  • Moon, Zi-Su (Dept. of Display Materials Engineering, Kyunghee Univ.) ;
  • Kim, Hong-Doo (Dept. of Display Materials Engineering, Kyunghee Univ.)
  • Published : 2009.10.12

Abstract

Modified self-assembled $TiO_2$ and polyelectrolyte multilayer film have been used as OTFT insulator. Both films were used as gate insulator and their thickness were reduced to the order of 10nm. The operating voltage of OTFT was substantially reduced due to nanoscale thickness of titanium oxide and polyelectrolyte multilayer. Pentacene-based OTFT characteristics will be discussed.

Keywords