과제정보
연구 과제번호 : 계통연계형 고효율 인버터 시스템을 위한 전력소자 기반기술개발
연구 과제 주관 기관 : 지식경제부
한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2009년도 추계학술대회 논문집
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- Pages.51-51
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- 2009
GaN Power FET 모델링에 관한 연구
Study on Modeling of GaN Power FET
- 발행 : 2009.11.12
초록
In this paper, we proposed GaN trench Static Induction Transistor(SIT). Because The compound semiconductor had superior thermal characteristics, GaN and SiC power devices is next generation power semiconductor devices. We carried out modeling of GaN SIT with 2-D device and process simulator. As a result of modeling, we obtained 340V breakdown voltage. The channel thickness was 3um and the channel doping concentration is 1e17cm-3. And we carried out thermal characteristics, too.