Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Simulation of the light emission from quantum-well based heterojunction bipolar transistors

  • 박영규 (고려대학교 전자전기공학과) ;
  • 박문호 (고려대학교 전자전기공학과) ;
  • 김광웅 (고려대학교 전자전기공학과) ;
  • 박정호 (고려대학교 전자전기공학과)
  • Published : 2009.11.12
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Abstract

In this work, we demonstrate the modelling and simulation of the AlGaAs/GaAs quantum-well based light emitting transistor(LET). Based on the experimental and theoretical model, we have compared between a heterojunction bipolar transistor(HBT) structure with quantum wells in the base region and a HBT without quantum wells in the base region. For the purpose of optimizing device design, several analytic and numerical studies have been presented.

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