Analysis of Material Removal Rate Profile and Stress Distribution According to Retainer Pressure

CMP에서 리테이너링의 압력에 따른 연마율 프로파일과 응력 분포 해석

  • Published : 2009.06.18


In chemical mechanical planarization (CMP) process, the uniformity of stress acting on wafer surface is a key factor for uniform material removal of thin film especially in the oxide CMP. In this paper, we analyze the stress on the contact region between wafer and pad with finite-element analysis (FEA). The setting pressure acting on wafer back side was $500g/cm^2$ and the retainer pressure was changed from 300 to $700g/cm^2$. The polishing test is also done with the same conditions. The material removal rate profiles well-matched with stress distribution.



Supported by : 과학기술부, 한국과학재단