Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2009.06a
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- Pages.482-483
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- 2009
Analysis of Material Removal Rate Profile and Stress Distribution According to Retainer Pressure
CMP에서 리테이너링의 압력에 따른 연마율 프로파일과 응력 분포 해석
- Lee, Hyun-Seop (Pusan National University) ;
- Lee, Sang-Jik (Pusan National University) ;
- Jeong, Suk-Hoon (Pusan National University) ;
- An, Joon-Ho (G&P Technology) ;
- Jeong, Hea-Do (Pusan National University)
- Published : 2009.06.18
Abstract
In chemical mechanical planarization (CMP) process, the uniformity of stress acting on wafer surface is a key factor for uniform material removal of thin film especially in the oxide CMP. In this paper, we analyze the stress on the contact region between wafer and pad with finite-element analysis (FEA). The setting pressure acting on wafer back side was
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