한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

산화물 박막 트랜지스터 동작에 대한 접촉 저항의 영향

Study on contact resistance on the performance of Oxide thin film transistors

  • 이재상 (한국과학기술연구원 에너지재료연구단) ;
  • 장성필 (한국과학기술연구원 에너지재료연구단) ;
  • 구상모 (광운대학교 전자재료공학과) ;
  • 이상렬 (한국과학기술연구원 에너지재료연구단)
  • 발행 : 2009.04.03
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

The TFTs have been fabricated with 3 different geometry SID electrodes which have the same channel W/L ratio (W/L = 5) due to constant channel resistance, The 3 samples have different channel widths (350, 150, and $25\;{\mu}m$) and channel lengths (70, 30, and $5\;{\mu}m$) by fixed channel W/L ratio simultaneously on one chip for reliable comparisons. Resultant on-current and field effect mobility are proportional to the channel width, while the subthreshold swing is inversely proportional to the channel width mainly due to the change of contact resistance. These results show that the contact resistance strongly affects the device performances and should be considered in the applications.

키워드