Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2009.04b
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- Pages.81-82
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- 2009
A Gate Drive IC for Power Modules with Shoot-Through Immunity
상단락 방지용 모듈을 구동하기 위한 게이트 구동 IC
- Seo, Dae-Won (Dankook University) ;
- Kim, Jun-Sik (Dankook University) ;
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Park, Shi-Hong
(Dankook University)
- Published : 2009.04.03
Abstract
This paper introduces a gate drive IC for power modules with shoot-through immunity. A new approach uses a bootstrap diode as a high-side voltage bias and a level shift function at the same time. Therefore, the gate drive circuit becomes a simple and low-cost without conventional level shift functions such as HVIC(High-Voltage IC), optocoupler and transformer. The proposed gate drive IC is designed and fabricated using the Dongbu-Hitek's 0.35um BD350BA process. It has been tested and verified with IGBT modules.
Keywords
- Gate Drive IC;
- Floating Power Supply;
- Level Shift;
- Bootstrap diode;
- Module With Shoot-Through Immunity