Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2009.04b
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- Pages.95-95
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- 2009
Sidewall effect in a stress induced method for Spontaneous growth of Bi nanowires
- Kim, Hyun-Su (Department of Materials Science and Engineering, Yonsei University) ;
- Ham, Jin-Hee (Department of Materials Science and Engineering, Yonsei University) ;
- Lee, Woo-Young (Department of Materials Science and Engineering, Yonsei University)
- Published : 2009.04.03
Abstract
Single-crystalline Bi nanowires have motivated many researchers to investigate novel quasi-one-dimensional phenomena such as the wire-boundary scattering effect and quantum confinement effects due to their electron effective mass (~0.001 me). Single crystalline Bi nanowires were found to grow on as-sputtered films after thermal annealing at