한국신재생에너지학회:학술대회논문집
- 2009.11a
- /
- Pages.346-346
- /
- 2009
Silicon Heterojunction Solar Cell with HWCVD Passivation Layer
HWCVD 계면 보호층을 적용한 실리콘 이종접합 태양전지 연구
-
Park, Sang-Hyun
;
- Jeong, Dae-Young ;
- Kim, Chan-Seok ;
- Song, Jun-Yong ;
-
Cho, Jun-Sik
;
-
Lee, Jeong-Chul
;
-
Choe, Deok-Gyun
;
-
Yoon, Kyoung-Hoon
;
-
Song, Jin-Soo
-
박상현
(한국에너지기술연구원)
;
- 정대영 (한국에너지기술연구원) ;
- 김찬석 (한국에너지기술연구원) ;
- 송준용 (한국에너지기술연구원) ;
-
조준식
(한국에너지기술연구원)
;
-
이정철
(한국에너지기술연구원)
;
-
최덕균
(한양대학교 박막전자재료연구실)
;
-
윤경훈
(한국에너지기술연구원)
;
-
송진수
(한국에너지기술연구원)
- Published : 2009.11.25
Abstract
For high efficiency hetero junction solar cell over 20%, good silicon wafer passivation is one of the most important technological factor. Compared to the conventional PECVD technique, HWCVD has appeared as an promising alternative for high quality passivation layer formation. In this work, HWCVD passivation layer characteristics have been intensively investigated on wafer surface treatment, Hydrogen density in deposited thin layer and thermal effects in deposition process. Comprehensive results of the individual process factors on interface passivation has been discussed and resultant silicon hetero junction solar cell characteristics has been investigated.