Preparation and Characteristics of CIGS nanopowder

CIGS nanopowder 제조 및 특성분석

  • 함창우 (한국전자통신연구원/융합원천기술연구팀) ;
  • 서정대 (한국전자통신연구원/융합원천기술연구팀) ;
  • 조정민 (한국전자통신연구원/융합원천기술연구팀) ;
  • 송기봉 (한국전자통신연구원/융합원천기술연구팀)
  • Published : 2009.11.25

Abstract

We have prepared and characterized CIGS nanopowder for absorber layer of photovoltaic. CIGS nanopowder were obtained at $260^{\circ}C$ for 6 hours from the reaction of $CuCl_2$, $InCl_3$, $GaCl_3$ and Se powder in solvent. The CIGS nanopowder were identified to have a typical chalcopyrite tetragonal structure by using X-ray diffraction(XRD), Inductively Coupled Plasma Auger Electron Spectroscopy (AES), Scanning Electron Microscopy(SEM).

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