Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2010.06a
- /
- Pages.6-6
- /
- 2010
Growth of single crystalline 3C-SiC thin films for high power semiconductor devices
고전력 반도체 소자용 단결정 3C-SiC 박막성장
- Shim, Jaen-Chul (University of Ulsan) ;
- Chung, Gwiy-Sang (University of Ulsan)
- Published : 2010.06.16
Abstract
This paper describes that single crystal cubic silicon (3C-SiC) films have been deposited on carbonized Si(100) substrate using hexamethyldisilane(HMDS,