한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2010년도 하계학술대회 논문집
- /
- Pages.10-10
- /
- 2010
ESD 보호를 위한 SOI 구조에서의 SCR의 제작 및 그 전기적 특성 분석
Design and Analysis of SCR on the SOI structure for ESD Protection
- Bae, Young-Seok (Korea University) ;
- Chun, Dae-Hwan (Korea University) ;
- Kwon, Oh-Sung (Korea University) ;
- Sung, Man-Young (Korea University)
- 발행 : 2010.06.16
초록
ESD (Electrostatic Discharge) phenomenon occurs in everywhere and especially it damages to semiconductor devices. For ESD protection, there are some devices such as diode, GGNMOS (Gate-Grounded NMOS), SCR (Silicon-Controlled Rectifier), etc. Among them, diode and GGNMOS are usually chosen because of their small size, even though SCR has greater current capability than GGNMOS. In this paper, a novel SCR is proposed on the SOI (Silicon-On-Insulator) structure which has