Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Role of Hf in amorphous oxide thin film transistors fabricated by rf-magnetron sputtering

스퍼터링 공정으로 제작된 비정질 산화물 박막트랜지스터의 하프늄 금속이온 영향

  • Chong, Eu-Gene (Electronic Materials Center, Korea Institute of Science and Technology) ;
  • Chun, Yoon-Soo (Electronic Materials Center, Korea Institute of Science and Technology) ;
  • Jo, Kyoung-Chol (Electronic Materials Center, Korea Institute of Science and Technology) ;
  • Kim, Seung-Han (Electronic Materials Center, Korea Institute of Science and Technology) ;
  • Jung, Da-Woon (Electronic Materials Center, Korea Institute of Science and Technology) ;
  • Lee, Sang-Yeol (Electronic Materials Center, Korea Institute of Science and Technology)
  • 정유진 (한국과학기술연구원 전자재료센터) ;
  • 전윤수 (한국과학기술연구원 전자재료센터) ;
  • 조경철 (한국과학기술연구원 전자재료센터) ;
  • 김승한 (한국과학기술연구원 전자재료센터) ;
  • 정다운 (한국과학기술연구원 전자재료센터) ;
  • 이상렬 (한국과학기술연구원 전자재료센터)
  • Published : 2010.06.16
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Abstract

Time dependence of the shift of the threshold voltage of amorphous hafnium-indium-zinc oxide (a-HIZO) has been reported under on-current stress condition. a-HIZO thin films were deposited on $SiO_2$/Si (100) by rf magnetron sputtering. XPS measurement indicates that the Hf metal cations in a-HIZO system after annealing process reduce oxygen vacancies by binding oxygen. It was found that the Hf metal cation can be effectively incorporated in the IZO thin films as a suppressor against both the oxygen deficiencies and the carrier generation in the ZnO-based system.

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