한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2010년도 하계학술대회 논문집
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- Pages.13-13
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- 2010
SONOS 플래시 메모리의 구조에 관한 특성연구
-
Yang, Seung-Dong
(Chungnam National University)
;
-
Oh, Jae-Sub
(National Nanofab Center)
;
- Park, Jeong-Gyu (Chungnam National University) ;
-
Jeong, Kwang-Seok
(Chungnam National University)
;
- Kim, Yu-Mi (Chungnam National University) ;
-
Yun, Ho-Jin
(Chungnam National University)
;
-
Lee, Ga-Won
(Chungnam National University)
- 발행 : 2010.06.16
초록
In this paper, the electrical characteristics of Fin-type SONOS (Silicon-Oxide-Nitride-Oxide-Silicon) flash memory and Planar-type SONOS flash memory are analyzed. Compared to the Planar-type SONOS device, Fin-type SONOS device shows a good short channel effect immunity. Moreover, memory characteristics such as PIE speed, Endurance and Retention of FinFET SONOS flash are batter than that of conventional Planar-type SONOS flash memory.