Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Can be the dielectric constant of thin films as-grown at room temperature higher than that of its bulk material?

  • Jung, Hyun-June (Chungnam National University, Korea Advanced Institute of Science and Technology) ;
  • Kim, Chung-Soo (Chungnam National University, Korea Advanced Institute of Science and Technology) ;
  • Lee, Jeong-Yong (Chungnam National University, Korea Advanced Institute of Science and Technology) ;
  • Yoon, Soon-Gil (Chungnam National University, Korea Advanced Institute of Science and Technology)
  • Published : 2010.06.16
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Abstract

The $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMNO)-Bi composite films sandwiched by an $Al_2O_3$ protection layer exhibited a linear increase of a dielectric constant with increasing thickness and the 1000nm-thick BMNO-Bi composite films showed a dielectric constant (~220) higher than that of its bulk material (~210), keeping a low leakage current density of about $0.1{\mu}A/cm^2$. An enhancement of the dielectric constant in the BMNO-Bi composite films was attributed to the hybrid model combined by a space charge polarization, dipolar response, and nano-capacitors. On the other hand, 1000nm-thick BMNO-Bi composite films sandwiched by 40nm-thick BMNO layer exhibited a dielectric constant of about 450 at 100 kHz and a leakage current density of $0.1{\mu}A/cm^2$ at 6V.

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