한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2010년도 하계학술대회 논문집
- /
- Pages.42-42
- /
- 2010
InGaN/GaN 양자우물층을 관통한 광결정 청색발광소자의 전기발광 특성
- Choi, Jae-Ho (Chonbuk National University) ;
- Lee, Jung-Tack (Chonbuk National University) ;
- Kim, Keun-Joo (Chonbuk National University)
- 발행 : 2010.06.16
초록
Deep-trenched photonic crystals passing through InGaN/GaN quantum well structural layer have been fabricated on the surface of GaN-based light emitting diode(LED) using by electron beam nanolithography. The lattice constant and hole diameter of the photonic crystals are 230nm and 140nm, respectively. The structural and electro-optical properties have been investigated by scanning electron microscope(SEM) and power-current-voltage(L-I-V). Electroluminescence from GaN-based LED with deep-trenched photonic crystal shows the higher intensity than that without photonic crystal.