Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2010.06a
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- Pages.57-57
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- 2010
The study about phase phase change material at nano-scale using c-AFM method
c-AFM 기술을 이용한 나노급 상변화 소자 특성 평가에 대한 연구
- Hong, Sung-Hoon (Department of Materials Science and Engineering, Korea University) ;
- Lee, Heon (Department of Materials Science and Engineering, Korea University)
- Published : 2010.06.16
Abstract
In this study, nano-sized phase change materials were evaluated using nanoimprint lithography and c-AFM technique. The 200nm in diameter phase change nano-pillar device of GeSbTe, AgInSbTe, InSe, GeTe, GeSb were successfully fabricated using nanoimprint lithography. And the electrical properties of the phase change nano-pillar device were evaluated using c-AFM with pulse generator and voltage source.
Keywords
- multi-level switching;
- stacked phase change material structure;
- phase change memory;
- nanoimprint lithography;
- conductive atomic force microscopy