c-AFM 기술을 이용한 나노급 상변화 소자 특성 평가에 대한 연구

The study about phase phase change material at nano-scale using c-AFM method

  • 홍성훈 (고려대학교 신소재공학과) ;
  • 이헌 (고려대학교 신소재공학과)
  • Hong, Sung-Hoon (Department of Materials Science and Engineering, Korea University) ;
  • Lee, Heon (Department of Materials Science and Engineering, Korea University)
  • 발행 : 2010.06.16

초록

In this study, nano-sized phase change materials were evaluated using nanoimprint lithography and c-AFM technique. The 200nm in diameter phase change nano-pillar device of GeSbTe, AgInSbTe, InSe, GeTe, GeSb were successfully fabricated using nanoimprint lithography. And the electrical properties of the phase change nano-pillar device were evaluated using c-AFM with pulse generator and voltage source.

키워드