Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Characteristics of a-IGZO TFT by the material of substrate and temperature

Substrate 물질에 따른 a-IGZO TFT의 온도 특성

  • Lee, Myeong-Eon (School of information & communication engineering Sungkyunkwan University) ;
  • Jeong, Han-Wook (School of information & communication engineering Sungkyunkwan University) ;
  • Park, Hyun-Ho (School of information & communication engineering Sungkyunkwan University) ;
  • Choi, Byung-Duk (School of information & communication engineering Sungkyunkwan University)
  • 이명언 (성균관대학교 정보통신공학부) ;
  • 정한욱 (성균관대학교 정보통신공학부) ;
  • 박현호 (성균관대학교 정보통신공학부) ;
  • 최병덕 (성균관대학교 정보통신공학부)
  • Published : 2010.06.16
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Abstract

Measuring the a-IGZO TFTs with various temperatures was found to induce a threshold voltage shift and a change of the subthreshold gate voltage swing. Characteristic change is dependant on a material of the substrate at the temperature from $20^{\circ}C$ to $100^{\circ}C$. The threshold voltage was shifted to the left from -2.7V to -61V on SiO2/galss. But, as the temperature increases form $20^{\circ}C$ to $100^{\circ}C$. the threshold voltage was shifted to the right from 0.85V to 2.45V.

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