Optical and textural properties of AZO:H thin films by RF magneton sputtering system with various working pressures

AZO:H films were prepared by RF magnetron sputtering system with a AZO (2wt% $Al_2O_3$) ceramic target at a temperature of $150^{\circ}C$. The annealing treatments were carried out in hydrogen ambient for 1hr at a temperature of $400^{\circ}C$. The AZO:H films were etched with 1 % HCl. The influence of the properties of AZO:H films deposited in various working pressures is investigated. As a result, the AZO:H film deposited in 4mTorr showed excellent electrical property of $\rho=5.036{\times}10^{-4}{\Omega}cm$ and strongly oriented (002) peak. The transmittance in the wavelength of 450nm was above 80%. It can be used as front electrode for increasing efficiency of GaN LED.