한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2010년도 하계학술대회 논문집
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- Pages.199-199
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- 2010
Back-gated MOSFET을 이용한 pH 농도 측정센서
pH Sensor using back-gated MOSFET
- Park, Jin-Kwon (Kwangwoon University) ;
- Kim, Min-Soo (Kwangwoon University) ;
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Cho, Won-Ju
(Kwangwoon University)
- 발행 : 2010.06.16
초록
A back-gated MOSFET on silicon-on-insulator (SOI) substrate for pH sensor was investigated. We used concentrations of pH solution from 6 to 9. The fabricated back-gated MOSFET has current difference and threshold voltage shift by pH concentrations. Therefore, It can be used to simplification of conventional pH sensor.