한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

Thermoelectric properties of multi-layered Bi-Te/In-Se/Bi-Te thin film deposited by RF magnetron sputter

  • Kim, Hyo-Jung (Department of Electronic Materials Center materials research center, Korea Institute of Science and Technology(KIST)) ;
  • Kim, Kwang-Chon (Department of Electronic Materials Center materials research center, Korea Institute of Science and Technology(KIST)) ;
  • Choi, Won-Chel (Department of Electronic Materials Center materials research center, Korea Institute of Science and Technology(KIST)) ;
  • Jung, Kyoo-Ho (Department of Electronic Materials Center materials research center, Korea Institute of Science and Technology(KIST)) ;
  • Kim, Hyun-Jae (School of Materials Science and Engineering, Seoul National University) ;
  • Park, Chan (School of Electrical and Electronic Engineering, Yonsei University) ;
  • Kim, Jin-Sang (Department of Electronic Materials Center materials research center, Korea Institute of Science and Technology(KIST))
  • 발행 : 2010.06.16
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초록

Thermoelectric properties of a multi-layered thin film, which was composed with indium selenide and bismuth telluride, were investigated. The structure of the layered thin film is Bi-Te /In-Se/Bi-Te and it was prepared on sapphire substrate by RF magnetron sputter using stoichiometric $Bi_2Te_3$ (99.9%) and $In_2Se_3$(99.99%) target at room temperature. Then, it was annealed at temperature range of 150 - $500^{\circ}C$ in Ar ambient. Structural characterizations were done using X-ray diffraction(XRD, BRUKER, D8, 60kW) and transmission electron microscopy (TEM, FEI, Tecnai, F30 S-Twin), respectively. Cross-section of multi-layer structure was observed by Scanning electron microscopy (SEM). The resistivity and Seebeck coefficient of these samples were also measured by conventional equipment at room temperature. The maximum value of power factor was $1.16\;{\mu}W/k^2m$ at annealing temperature of $400^{\circ}C$.

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