Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2010.06a
- /
- Pages.258-258
- /
- 2010
Back bias effects in the programming using two-step pulse injection
2 단계 펄스 주입을 이용한 프로그램 방법에서 백바이어스 효과
- An, Ho-Myoung (Department of Electrical Engineering, Korea University) ;
- Zhang, Yong-Jie (Department of Electrical Engineering, Korea University) ;
- Kim, Hee-Dong (Department of Electrical Engineering, Korea University) ;
- Seo, Yu-Jeong (Department of Electrical Engineering, Korea University) ;
-
Kim, Tae- Geun
(Department of Electrical Engineering, Korea University)
- 안호명 (고려대학교 전기전자전파공학과) ;
- 장영걸 (고려대학교 전기전자전파공학과) ;
- 김희동 (고려대학교 전기전자전파공학과) ;
- 서유정 (고려대학교 전기전자전파공학과) ;
-
김태근
(고려대학교 전기전자전파공학과)
- Published : 2010.06.16
Abstract
In this work, back bias effects in the program of the silicon-oxide-nitride-oxide-silicon (SONOS) cell using two-step pulse sequence, are investigated. Two-step pulse sequence is composed of the forward biases for collecting the electrons at the substrate terminal and back bias for injecting the hot electrons into the nitride layer. With an aid of the back bias for electron injection, we obtain a program time as short as 600 ns and an ultra low-voltage operation with a substrate voltage of -3 V.