Dielectric Properties of Continuous Composition Spreaded $BaTiO_3-SrTiO_3$ Thin Films Prepared by Off-Axis RF Magnetron Sputtering System

  • Kim, Yoon-Hoe (Electronic Materials Center, Korea Institute of Science and Technology) ;
  • Jung, Keun (Electronic Materials Center, Korea Institute of Science and Technology) ;
  • Yoon, Seok-Jin (Electronic Materials Center, Korea Institute of Science and Technology) ;
  • Park, Kyung-Bong (The Center for Green Materials Technology, Andong University) ;
  • Choi, Ji-Won (Electronic Materials Center, Korea Institute of Science and Technology)
  • 발행 : 2010.06.16

초록

The dielectric properties of continuous composition spreaded (CCS) $BaTiO_3-SrTiO_3$ (BST) thin filmsgrown at room temperature and annealed at different temperature ($350^{\circ}C$ and $550^{\circ}C$) were investigated. Moreover, electrical properties (leakage current and breakdown voltage) of CCS BST thin films were also investigated. The aluminum top-electrode, sized by $200{\times}200\;{\mu}m2$ and apart from each other by $300\;{\mu}m$, were deposited on the CCS BST thin films by the DC sputtering system. The dielectric properties of the CCS BST thin films were significantly influenced depending on the distance from $BaTiO_3$ and $SrTiO_3$ targets which was attributed to the $BaTiO_3-SrTiO_3$ composition ratio. The maps of dielectric constants and loss tangents were plotted via $1500\;{\mu}m$ - step measuring. The specific points showing the dielectric constant (k: ~300) and loss tangent (tand: ~0.008) at 1 MHz were found.

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