KOH계열 수용액을 이용한 GaN 박막의 photo-assisted 식각 특성

Photo-assisted GaN wet-chemical Etching using KOH based solution

  • 이형진 (전자부품연구원 전력 IT연구센터) ;
  • 송홍주 (전자부품연구원 전력 IT연구센터) ;
  • 최홍구 (전자부품연구원 전력 IT연구센터) ;
  • 하민우 (전자부품연구원 전력 IT연구센터) ;
  • 노정현 (전자부품연구원 전력 IT연구센터) ;
  • 이준호 (전자부품연구원 전력 IT연구센터) ;
  • 박정호 (고려대학교 전자전기공학부) ;
  • 한철구 (전자부품연구원 전력 IT연구센터)
  • Lee, Hyoung-Jin (Electric Power IT Research Center, Korea Electronics Technology Institute (KETI)) ;
  • Song, Hong-Ju (Electric Power IT Research Center, Korea Electronics Technology Institute (KETI)) ;
  • Choi, Hong-Goo (Electric Power IT Research Center, Korea Electronics Technology Institute (KETI)) ;
  • Ha, Min-Woo (Electric Power IT Research Center, Korea Electronics Technology Institute (KETI)) ;
  • Roh, Cheong-Hyun (Electric Power IT Research Center, Korea Electronics Technology Institute (KETI)) ;
  • Lee, Jun-Ho (Electric Power IT Research Center, Korea Electronics Technology Institute (KETI)) ;
  • Park, Jung-Ho (School of Electrical Engineering, Korea University) ;
  • Hahn, Cheol-Koo (Electric Power IT Research Center, Korea Electronics Technology Institute (KETI))
  • 발행 : 2010.06.16

초록

Photo-assisted wet chemical etching of GaN thin film was studied using KOH based solutions. A $2{\mu}m-2{\mu}m$ titanium line-and-space pattern was used as a etching mask. It is found that the etching characteristics of the GaN thin film is strongly dependent on the pattern direction by unisotropic property of KOH based solution. When the pattern was aligned to the [$11\bar{2}0$] directions, ($10\bar{1}n$)-facet is revealed constructing V-shaped sidewalls.

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