한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2010년도 하계학술대회 논문집
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- Pages.343-343
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- 2010
Fabrication of Schottky barrier Thin-Film-Transistor (SB-TFT) on glass substrate with metallic source/drain
- Jang, Hyun-June (Kangwoon University) ;
- Oh, Jun-Seok (Kangwoon University) ;
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Cho, Won-Ju
(Kangwoon University)
- 발행 : 2010.06.16
초록
In this paper, Schottky barrier thin-film-transistors (SB-TFTs) with platinum silicide at source/drain region based on glass substrate were fabricated. Poly-silicon on glass substrates was crystallized by excimer laser annealing (ELA) method. The formation of pt-silicide at source/drain region is the most important process for SB-TFTs fabrication. We study the optimal condition of Pt-silicidation on glass substrate. Also, we propose this device as promising structure in the future.