금속(Al, Cr, Ni)의 일함수를 고려한 쇼트키 장벽 트랜지스터의 전기-광학적 특성

Metal work function dependent photoresponse of schottky barrier metal-oxide-field effect transistors(SB MOSFETs)

We studied the dependence of the performance of schottky barrier metal-oxide-field effect transistors(SB MOSFETs) on the work function of source/drain metals. A strong impact of the various work functions and the light wavelengths on the transistor characteristics is found and explained using experimental data. We used an insulator of a high thickness (100nm) and back gate issues in SOI substrate, subthreshold swing was measured to 300~400[mV/dec] comparing with a ideal subthreshold swing of 60[mV/dec]. Excellent characteristics of Al/Si was demonstrated higher on/off current ratios of ${\sim}10^7$ than others. In addition, extensive photoresponse analysis has been performed using halogen and deuterium light sources(200<$\lambda$<2000nm).